Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation
نویسندگان
چکیده
T. Tachikawa, M. Minohara, Y. Nakanishi, Y. Hikita, M. Yoshita, H. Akiyama, C. Bell, and H. Y. Hwang Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, USA. Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan. Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan. Department of Applied Physics, Stanford University, Stanford, CA 94305, USA.
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